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1 / 13 asb inc. ? sales@asb .co.kr january 2017 AWG2015 1. product overview 1.1 general description aw g2015 , a gain block amplifier mmic, has high linearity , low noise and high efficiency over a wide range of frequency from 3 0 mhz to 4000 mhz, be ing suitable for use in both receiver and transmitter of telecommunication system up to 4 ghz . it has an active bias network for stable current over temperature and process variation. the amplifier is available in a n sot89 package and passes through the st ringent dc , rf , and reliability test s. 1.2 features ? 14.9 db gain at 20 00 mhz ? 17.0 dbm p1db at 2000 mhz ? 39.0 dbm oip3 at 2000 mhz ? gain flatness = 0.3 db at 500 ~ 25 00 mhz ? 50 ? input & output matching ? mttf > 100 years ? single supply: + 3.3 v 1.3 applic ations ? wide - band application at 500 ~ 300 0 mhz ? if, catv application at 30 ~ 1 2 00 mhz ? smatv, onu application at 50 ~ 30 00 mhz 1.4 package profile & rohs compliance sot89 , 4.5x4.0 mm 2 , surface mount rohs - compliant AWG2015 data sheet 5 0 ~ 4000 mhz wide - band gain block amplifier mmic gain & return loss vs. frequency(with biastees) 0 1000 2000 3000 4000 5000 frequency (mhz) -40 -30 -20 -10 0 10 20 30 s-parameters (db) s21 s11 s22
2 / 13 asb inc. ? sales@asb .co.kr january 2017 AWG2015 2. summary on product performances 2.1 typ ical performance supply voltage = + 3.3 v, t a = +25 ? c, z o = 50 ?? ? parameter typical unit frequency 70 150 300 450 900 2000 2500 2700 mhz gain 15.8 15.6 15.5 15.4 15.2 14.9 14.8 14.7 db s11 - 17.0 - 20.0 - 20.0 - 20.0 - 18.0 - 20.0 - 20.0 - 20.0 db s22 - 15.0 - 15.0 - 16.0 - 17.0 - 13.0 - 18 .0 - 18.0 - 18.0 db noise figure 2.2 2.2 2.2 2.2 2.2 2.6 2.9 3.3 db output ip3 1) 39.0 39.0 40.0 40.0 39.0 39.0 35.0 32.0 dbm output p1db 17.0 17.0 17.0 17.0 17.0 17.0 17.0 17.0 db m current 95 ma device voltage +3.3 v 1) oip3 i s measured with two tones at an output power of +5 dbm/tone separated by 1mhz . 2.2 product specification supply voltage = + 3.3 v, t a = +25 ? c, z o = 50 ?? ? parameter min typ max unit frequency 20 00 mhz gain 14.0 14.9 16.0 db s11 - 16.0 - 20.0 db s22 - 16.0 - 18 .0 db noise figure 2.6 2.9 db oip3 36.0 39.0 dbm p1db 16.0 17.0 dbm current 75 95 110 ma device voltage +3.3 v 2.3 pin configuration pin description simplified outline 1 rf_in 2 ground 3 rf_out & bias
3 / 13 asb inc. ? sales@asb .co.kr january 2017 AWG2015 2.4 absolute maximum ratings parameters max. ratings operation case temperature - 40 to ? 85 ? c storage temperature - 40 to ? 150 ? c device voltage + 4.5 v operation junction temperature +150 ? c input rf power ( at 2000 mhz, cw, 50 ? matched) * + 27 dbm *please find the max. input power data from http://www.asb.co.kr/pdf/maximum_input_power_analysis.pdf the max. input power, in principle, depends upon the appl ication frequency and matching circuit. 2.5 thermal resistance symbol description typ unit r th thermal resistance from junction to lead 80 ? c/w 2.6 esd classification & moisture sensitivity level esd clas sification hbm class 1b voltage level: 750 v mm class a v oltage level: 100 v caution: gallium arsenide integrated circuits are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these devices. moisture sensitivity level m sl 3 at 260 ? c reflow (intentionally blanked)
4 / 13 asb inc. ? sales@asb .co.kr january 2017 AWG2015 pcb information material fr4 thickness (mm) 0.8 size (mm) 40x40 eb no. eb - 89 - a2 3. application : 5 00 ~ 3 0 00 mhz 3.1 application circuit & evaluation board bill of material symbol value size description manufacturer AWG2015 - - mmic amplifier asb c1, c2 100 pf 0603 dc block ing capacitor murata c3 100 pf 0603 decoupling capacitor murata c 4 1 ? f 0603 decoupling capacitor murata l1 33 nh 0603 rf choke inductor murata c1 c2 c3 l 1 c4 AWG2015 rf in rf out vdevice = +3.3 v
5 / 13 asb inc. ? sales@asb .co.kr january 2017 AWG2015 3.2 performance table supply voltage = + 3.3 v, t a = +25 ? c, z o = 5 0 ?? ? parameter typical unit frequency 500 900 2000 2500 2700 3000 mhz gain 15.1 15.2 14.9 14.8 14.7 14.7 db s11 - 14.0 - 18.0 - 20.0 - 20.0 - 20.0 - 18.0 db s22 - 11 .0 - 13.0 - 18 .0 - 18.0 - 18.0 - 20.0 db noise figure 2.2 2.2 2.6 2.9 3.3 3.6 db output ip3 1) 40.0 39.0 39.0 35.0 32.0 27.0 dbm output p1db 17.0 17.0 17.0 17.0 17.0 16.5 dbm current 95 ma device voltage +3.3 v 1) oip3 is measured with two tones at an output power of +5 dbm/tone separated by 1mhz . 3.3 plot of s - parameter & stability factor 0 1000 2000 3000 4000 frequency (mhz) -40 -30 -20 -10 0 10 20 30 s-parameters (db) 0 1 2 3 4 5 6 7 stability factor, k s21 s12 s11 s22 k
6 / 13 asb inc. ? sales@asb .co.kr january 2017 AWG2015 3.4 plot s of noise figure and performances with temperature -60 -40 -20 0 20 40 60 80 100 temperature (c) 70 75 80 85 90 95 100 105 110 current (ma) -60 -40 -20 0 20 40 60 80 100 temperature (c) 0 5 10 15 20 25 gain (db) frequency = 2000 mhz -60 -40 -20 0 20 40 60 80 100 temperature (c) 0 1 2 3 4 5 nf (db) frequency = 2000 mhz
7 / 13 asb inc. ? sales@asb .co.kr january 2017 AWG2015 -60 -40 -20 0 20 40 60 80 100 temperature (c) 12 14 16 18 20 p1db (dbm) frequency = 2000 mhz
8 / 13 asb inc. ? sales@asb .co.kr january 2017 AWG2015 4. application : 30 ~ 1200 mhz ( if, catv ) 4.1 application circuit & evaluation board bill of material symbol value size description manufacturer AWG2015 - - mmic amplifier asb c1, c2 1 ? f 0603 dc block ing capacitor murata c3 - - not used c4 10 ? f 0805 decoupling capacitor murata l1 3.3 ? h 0603 rf choke inductor samsung pcb information material fr4 thickness (mm) 0.8 size (mm) 40x40 eb no. eb - 89 - a2 c1 c2 c3 l 1 c4 AWG2015 rf in rf out vdevice = +3.3 v
9 / 13 asb inc. ? sales@asb .co.kr january 2017 AWG2015 4.2 performance table supply voltage = + 3.3 v, t a = +25 ? c, z o = 5 0 ?? ? parameter typical unit frequency 30 70 150 300 450 860 1000 1200 mhz gain 16.7 15.8 15.6 15.5 15.4 15.3 15. 2 15.0 db s11 - 10.0 - 17.0 - 20.0 - 20.0 - 20.0 - 20.0 - 18.0 - 18.0 db s22 - 17.0 - 15.0 - 15.0 - 16.0 - 17.0 - 18.0 - 18.0 - 18.0 db noise figure 2.3 2.2 2.2 2.2 2.2 2.2 2.2 2.2 db output ip3 1) 37.0 39.0 39.0 40.0 40.0 38.5 38.0 38.0 dbm output p1db 17.0 17.0 17.0 17.0 17.0 17.0 17.0 17.0 dbm current 95 ma device voltage +3.3 v 1) oip3 is measured with two tones at an output power of +5 dbm/tone separated by 1mhz . 4.3 plot of s - parameter & stability factor 0 300 600 900 1200 frequency (mhz) -40 -30 -20 -10 0 10 20 30 s-parameters (db) 0 1 2 3 4 5 6 7 stability factor, k s21 s12 s11 s22 k
10 / 13 asb inc. ? sales@asb .co.kr january 2017 AWG2015 5. application : 50 ~ 30 00 mhz ( smatv, onu ) 5.1 application circu it & evaluation board bill of material symbol value size description manufacturer AWG2015 - - mmic amplifier asb c1, c2 1 ? f 0603 dc block ing capacitor murata c3 - - not used c4 10 ? f 0805 decoupling capacitor murata l 1 1 ? h 0603 rf choke inductor samsung pcb information material fr4 thickness (mm) 0.8 size (mm) 40x4 0 eb no. eb - 89 - a2 c1 c2 c3 l 1 c4 AWG2015 rf in rf out vdevice = +3.3 v
11 / 13 asb inc. ? sales@asb .co.kr january 2017 AWG2015 5.2 performance table supply voltage = + 3.3 v, t a = +25 ? c, z o = 5 0 ?? ? parameter typical unit frequency 50 500 1000 2000 2500 3000 mhz gain 15.8 15.2 14.9 14.0 13.5 13.0 db s11 - 12.0 - 20.0 - 18.0 - 16.0 - 15.0 - 14.0 db s22 - 16.0 - 16.0 - 17.0 - 15.0 - 14.0 - 13.0 db noise figure 2.4 2.4 2.4 2. 6 2.8 3.4 db output ip3 1) 36.0 40.0 38.5 38.0 36.0 28.0 dbm output p1db 17.0 17.0 17.0 17.0 16.5 15.5 dbm current 95 ma device voltage +3.3 v 1) oip3 is measured with two tones at an output power of +5 dbm/tone separated by 1mhz . 5.3 plot of s - parameter & stability factor 0 500 1000 1500 2000 2500 3000 3500 frequency (mhz) -40 -30 -20 -10 0 10 20 30 s-parameters (db) 0 1 2 3 4 5 6 7 s21 s12 s11 s22 k
12 / 13 asb inc. ? sales@asb .co.kr january 2017 AWG2015 6. package outline (sot89, 4.5x4.0x1.5 mm) 7. surface mount recommendation (in mm) symbols dimensions (in mm) min nom max a 1.40 1.50 1.60 l 0.89 1.04 1.20 b 0.36 0.42 0.48 b1 0.41 0.47 0.53 c 0. 38 0.40 0.43 d 4.40 4.50 4.60 d1 1.40 1.60 1.75 e 3.64 --- 4.25 e1 2.40 2.50 2.60 e1 2.90 3.00 3.10 h 0.35 0.40 0.45 s 0.65 0.75 0.85 e 1.40 1.50 1.60 wg2015 pxxxx lot no. part no. n ote 1. the number and size of ground via holes in a circuit board are critical for thermal and rf grounding considerations. 2. we recommend that the ground via holes be placed on the bottom of the lead pi n 2 and exposed pad of the device for better rf and thermal performance, as shown in the drawing at the left side.
13 / 13 asb inc. ? sales@asb .co.kr january 2017 AWG2015 8. recommended soldering reflow profile (end of datasheet) copyright ? 2014 - 2017 asb inc. all rights reserved. datasheet subject to change without notice. asb assumes no responsibility for any errors which may appear in this datasheet. no part of the datas heet may be copied or reproduced in any form or by any means without the prior written consent of asb. 20~40 sec 260 ? c 200 ? c 150 ? c 60~180 sec ramp - up (3 ? c/sec) ramp - down (6 ? c/sec)

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